Brand: |
Texas Instruments |
Channel Mode: |
Enhancement |
Configuration: |
Single |
Factory Pack Quantity: Factory Pack Quantity: |
50 |
Fall Time: |
5.6 ns |
Forward Transconductance - Min: |
187 S |
Id - Continuous Drain Current: |
169 A |
Manufacturer: |
Texas Instruments |
Maximum Operating Temperature: |
+175 C |
Minimum Operating Temperature: |
-55 C |
Mounting Style: |
Through Hole |
Number of Channels: |
1 Channel |
Package / Case: |
TO-220-3 |
Packaging: |
Tube |
Pd - Power Dissipation: |
250 W |
Product Category: |
MOSFET |
Product Type: |
MOSFET |
Qg - Gate Charge: |
44 nC |
Rds On - Drain-Source Resistance: |
4.2 mOhms |
Rise Time: |
5.3 ns |
Series: |
CSD18532KCS |
Subcategory: |
MOSFETs |
Technology: |
Si |
Tradename: |
NexFET |
Transistor Polarity: |
N-Channel |
Transistor Type: |
1 N-Channel |
Typical Turn-Off Delay Time: |
24.2 ns |
Typical Turn-On Delay Time: |
7.8 ns |
Vds - Drain-Source Breakdown Voltage: |
60 V |
Vgs - Gate-Source Voltage: |
-20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: |
1.5 V |